Radiation hardened CMOS/SOS

Conference · Sun Nov 30 23:00:00 EST 1975 · IEEE Trans. Nucl. Sci., v. NS-22, no. 6, pp. 2181-2184

OSTI ID:4094739

Aubuchon, K G; Harari, E

This paper reports the results of experiments designed to optimize the total dose ionizing radiation hardness of CMOS/SOS devices. Type 4007 inverter circuits were fabricated with variations in the process, including wet versus dry gate oxidation. Tolerable values (e.g. less than 1 $mu$A per mil of channel width) of post-radiation n-channel back leakage were obtained only with wet oxides. Threshold shifts of less than or equal to 1V for the n-channel devices and less than or equal to 2V for the p-channel devices were obtained after 10$sup 6$ rads (Si) on the best devices fabricated. (auth)

• Research Organization: Hughes Aircraft Co., Newport Beach, CA
• NSA Number: NSA-33-020345
• OSTI ID: 4094739
• Journal Information: IEEE Trans. Nucl. Sci., v. NS-22, no. 6, pp. 2181-2184, Journal Name: IEEE Trans. Nucl. Sci., v. NS-22, no. 6, pp. 2181-2184; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

*MOS TRANSISTORS-- RADIATION HARDENING
440200* --Instrumentation--Radiation Effects on Instrument Components
Instruments
or Electronic Systems
DESIGN
LEAKAGE CURRENT
N46300* --Instrumentation--Radiation Effects on Instrument Components
Instruments
or Electronic Systems
OPTIMIZATION