High performance radiation hard CMOS/SOS technology

Conference · Thu Dec 01 04:00:00 EST 1977 · IEEE Trans. Nucl. Sci.; (United States)

OSTI ID:6545793

Yuan, J H; Harari, E

This paper describes the ionizing radiation effects on Si-gate CMOS/SOS short channel devices having channel lengths ranging from 1.8 ..mu..m to 3.8 ..mu..m. These short channel CMOS/SOS devices exhibit very high speed performance; the 1.8 ..mu..m channel length devices achieve a propagation delay time of 0.19 ns at 10 V and 0.26 ns at 5 V while the 2.8 ..mu..m channel length devices achieve a propagation delay time of 0.41 ns at 10 V and 0.71 ns at 5 V. Post-radiation n-channel back leakages of less than or equal to 0.1 ..mu..a/mil of channel width and threshold voltage shifts of less than or equal to 1 V for both n and p-channel devices were obtained after 10/sup 6/ rads (Si) on the 2.8 ..mu..m channel length devices.

• Research Organization: Hughes Aircraft Co., Newport Beach, CA
• OSTI ID: 6545793
• Conference Information: Journal Name: IEEE Trans. Nucl. Sci.; (United States) Journal Volume: NS-24:6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360206 -- Ceramics
Cermets
& Refractories-- Radiation Effects
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
CHALCOGENIDES
ELECTRONIC CIRCUITS
HARDENING
INTEGRATED CIRCUITS
MICROELECTRONIC CIRCUITS
MOS TRANSISTORS
OXIDES
OXYGEN COMPOUNDS
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SILICON COMPOUNDS
SILICON OXIDES
TESTING
TRANSISTORS