Radiation effects in n-buried channel CCDs fabricated with a hardened process
Ionizing radiation data are presented on 4-phase n-buried channel 128 bit CCDs with a polysilicon overlapping polysilicon gate structure which were fabricated with a radiation hardened process. These CCDs can be operated well up to 1.2 x 10/sup 6/ rads (Si) without changing any biasing conditions. The threshold voltage shifts are less than or equal to -1.8 V for the buried polysilicon gate test MOSFETs, and less than or equal to -0.4 V for the surface polysilicon gate test MOSFETs. The charge transfer efficiency is better than 0.9998 after 1.2 x 10/sup 6/ rads with 20% fat zero. The average dark current increases to 107 nA/cm/sup 2/ for +10 V gate bias and to 65 nA/cm/sup 2/ for 0 V gate bias.
- Research Organization:
- Hughes Aircraft Co., Newport Beach, CA
- OSTI ID:
- 6805805
- Journal Information:
- IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-24:6; ISSN IETNA
- Country of Publication:
- United States
- Language:
- English
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Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CHARGE-COUPLED DEVICES
HARDENING
MANUFACTURING
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES