Self-aligned phosphorus doped polysilicon gate MOS device radiation hardening

Journal Article · Wed Dec 01 04:00:00 EST 1982 · IEEE Trans. Nucl. Sci.; (United States)

DOI:https://doi.org/10.1109/TNS.1982.4336432· OSTI ID:5922148

Chang, C P

It is well known that processing steps strongly affect the radiation tolerance of MOS oxides. In this paper the authors present the effects of the ion implantation to form the source-drain regions of self-aligned polysilicon gate MOSFETs. Radiation hardness varies systematically with the n+ and the p+ ion implantation energies, and the masking polysilicon gate thickness. For a fixed polysilicon thickness, there is an optimum implantation energy allowed to give the best device performance and radiation behavior. Extending the implantation energy beyond the optimum tends to degrade the hardness. This is verified by the capacitor experiments. The shift in n-channel threshold for devices fabricated by the optimum radiation-hardened process developed here is decreased from -6.1V to -1.8V at 3 X 10/sup 5/ rads (Si) total dose. The p-channel threshold at 1 X 10/sup 6/ rads (Si) is decreased by 4.5 volts. The 8-bit Arithmetic Logic Unit (ALU) device from wafer to wafer, and lot to lot can be operated well up to 1 X 10/sup 6/ rads (Si).

• Research Organization: Hughes Aircraft Co., Newport Beach, CA 92663
• OSTI ID: 5922148
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. 29:6; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CAPACITORS
CHALCOGENIDES
COMPUTERS
CRYSTALS
ELECTRICAL EQUIPMENT
ELEMENTS
EQUIPMENT
FIELD EFFECT TRANSISTORS
HARDENING
HARDNESS
ION IMPLANTATION
MECHANICAL PROPERTIES
MOS TRANSISTORS
NONMETALS
OXIDES
OXYGEN COMPOUNDS
PHOSPHORUS
PHYSICAL RADIATION EFFECTS
POLYCRYSTALS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
TRANSISTORS