Surface and interface structure of epitaxial CoSi sub 2 films on Si(111)

Conference · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

OSTI ID:7306031

Stalder, R; Onda, N; Sirringhaus, H; Kaenel, H von ^[1]; Bulle-Lieuwma, C W.T. ^[2]

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1. ETH Zuerich (Switzerland)
2. Phillips Research Labs., Eindhoven (Netherlands)

The surface and interface structures of molecular beam epitaxially grown CoSi{sub 2} films on Si(111) have been studied by scanning tunneling microscopy and by transmission electron microscopy, respectively. All surfaces are found to be inhomogeneous, exhibiting (2 {times} 1) and (2 {times} 2) reconstructed domains along with unreconstructed areas, depending on their stoichiometry. All of them could be imagined with atomic resolution. The surface step structure and the formation of pinholes have been examined for a wide range of growth conditions. Evidence is presented for micron-scale surface diffusion of Si on CoSi{sub 2} at temperatures as low as 800 K. The interface step structure, studied by transmission electron microscopy, has been found to depend critically on the details of the growth procedure.

• OSTI ID: 7306031
• Report Number(s): CONF-910115-; CODEN: JVTBD
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Vol. 9:4; Conference: 18. annual conference on physics and chemistry of semiconductor interfaces, Long Beach, CA (United States), 29 Jan - 1 Feb 1991; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COBALT SILICIDES
CRYSTAL STRUCTURE
MOLECULAR BEAM EPITAXY
INTERFACES
MOLECULAR STRUCTURE
SCANNING ELECTRON MICROSCOPY
STOICHIOMETRY
TEMPERATURE RANGE 1000-4000 K
TRANSMISSION ELECTRON MICROSCOPY
COBALT COMPOUNDS
ELECTRON MICROSCOPY
EPITAXY
MICROSCOPY
SILICIDES
SILICON COMPOUNDS
TEMPERATURE RANGE
TRANSITION ELEMENT COMPOUNDS
360602* - Other Materials- Structure & Phase Studies