Microstructure of buried CoSi sub 2 layers formed by high-dose Co implantation into (100) and (111) Si substrates

Journal Article · Sun Sep 15 00:00:00 EDT 1991 · Journal of Applied Physics; (United States)

DOI:https://doi.org/10.1063/1.349288· OSTI ID:5183441

Bulle-Lieuwma, C W.T.; Van Ommen, A H; Vandenhoudt, D E.W.; Ottenheim, J J.M.; de Jong, A F ^[1]

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1. Philips Research Laboratories WY-2, P.O. Box 80 000, 5600 JA, Eindhoven (The Netherlands)

Heteroepitaxial Si/CoSi{sub 2}/Si structures have been synthesized by implanting 170-keV Co{sup +} with doses in the range 1--3{times}10{sup 17} Co{sup +}ions/cm{sup 2} into (100) and (111) Si substrates and subsequent annealing. The microstructure of both the as-implanted and annealed structures is investigated in great detail by transmission electron microscopy, high-resolution electron microscopy, and x-ray diffraction. In the as-implanted samples, the Co is present as CoSi{sub 2} precipitates, occurring both in aligned (A-type) and twinned (B-type) orientation. For the highest dose, a continuous layer of stoichiometric CoSi{sub 2} is already formed during implantation. It is found that the formation of a connected layer, already during implantation, is crucial for the formation of a buried CoSi{sub 2} layer upon subsequent annealing. Particular attention is given to the coordination of the interfacial Co atoms at the Si/CoSi{sub 2} (111) interfaces of both types of precipitates. We find that the interfacial Co atoms at the A-type interfaces are fully sevenfold coordinated, whereas at the B-type interfaces they appear to be eightfold coordinated.

• OSTI ID: 5183441
• Journal Information: Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 70:6; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

656003* -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALLOYS
ANNEALING
BEAMS
COBALT ADDITIONS
COBALT ALLOYS
COBALT COMPOUNDS
COBALT SILICIDES
COHERENT SCATTERING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIFFRACTION
DISLOCATIONS
ELECTRON MICROSCOPY
ENERGY RANGE
HEAT TREATMENTS
INTERFACES
ION BEAMS
ION IMPLANTATION
KEV RANGE
KEV RANGE 100-1000
LINE DEFECTS
MICROSCOPY
MICROSTRUCTURE
SCATTERING
SILICIDES
SILICON COMPOUNDS
STRAINS
TRANSITION ELEMENT COMPOUNDS
X-RAY DIFFRACTION