Mesotaxy: Single-crystal growth of buried CoSi/sub 2/ layers

Journal Article · Mon Jan 12 04:00:00 EST 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.97830· OSTI ID:7156613

White, A E; Short, K T; Dynes, R C; Garno, J P; Gibson, J M

Buried single-crystal CoSi/sub 2/ layers in silicon have been formed by high dose implantation of cobalt followed by annealing. These layers grow in both the (100) and (111) orientations: those in (111) have better crystallinity, but those in (100) are of higher electrical quality. Electrical transport measurements on the layers give values for the resistance ratios and superconducting critical temperatures that are better than the best films grown by conventional techniques and comparable to bulk CoSi/sub 2/.

• Research Organization: ATandT Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 7156613
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 50:2; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360101* -- Metals & Alloys-- Preparation & Fabrication
360102 -- Metals & Alloys-- Structure & Phase Studies
360104 -- Metals & Alloys-- Physical Properties
656100 -- Condensed Matter Physics-- Superconductivity
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
COBALT COMPOUNDS
COBALT SILICIDES
CRITICAL TEMPERATURE
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DATA
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
EPITAXY
EXPERIMENTAL DATA
FABRICATION
FILMS
HEAT TREATMENTS
INFORMATION
ION IMPLANTATION
LAYERS
NUMERICAL DATA
PHYSICAL PROPERTIES
SILICIDES
SILICON COMPOUNDS
SUPERCONDUCTING FILMS
THERMODYNAMIC PROPERTIES
TRANSITION ELEMENT COMPOUNDS
TRANSITION TEMPERATURE