Dependence of buried CoSi sub 2 resistivity on ion implantation and annealing conditions

Conference · Tue Dec 31 23:00:00 EST 1991

OSTI ID:7228711

Namavar, F; Kalkhoran, N M; Manke, J M ^[1]; Luo, L ^[2]; McGinn, J T ^[3]

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1. Spire Corp., Bedford, MA (United States)
2. Los Alamos National Lab., NM (United States)
3. David Sarnoff Research Center, Princeton, NJ (United States)

We have investigated the dependence of electrical and material properties of buried CoSi{sub 2} layers on Co+ implantation and annealing conditions. The results indicated that the electrical resistivity and crystalline quality of the implanted buried CoSi{sub 2} layers depend strongly on the implantation temperature. CoSi{sub 2} layers with the lowest resistivity and best crystalline quality ({chi}{sub min} as low as 3.6%) were obtained from samples implanted at 300{degrees}C--400{degrees}C. Implantation at higher temperatures (e.g., 580{degrees}C) produced cobalt disilicide layers with significantly higher electrical resistivity and a {chi}{sub min} of about 10.7%.

• Research Organization: Los Alamos National Lab., NM (United States)
• Sponsoring Organization: DOE; NASA; USDOE, Washington, DC (United States); National Aeronautics and Space Administration, Washington, DC (United States)
• DOE Contract Number: W-7405-ENG-36
• OSTI ID: 7228711
• Report Number(s): LA-UR-92-684; CONF-921206--3; ON: DE92010080
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
360606* -- Other Materials-- Physical Properties-- (1992-)
ANNEALING
CHARGED PARTICLES
COBALT COMPOUNDS
COBALT IONS
COBALT SILICIDES
COHERENT SCATTERING
DIFFRACTION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
HEAT TREATMENTS
ION IMPLANTATION
IONS
LAYERS
MICROSCOPY
PHYSICAL PROPERTIES
SCATTERING
SILICIDES
SILICON COMPOUNDS
TEMPERATURE DEPENDENCE
TRANSITION ELEMENT COMPOUNDS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION