Dependence of buried CoSi{sub 2} resistivity on ion implantation and annealing conditions

Conference · Wed Apr 01 04:00:00 EST 1992

OSTI ID:10135502

Namavar, F; Kalkhoran, N M; Manke, J M ^[1]; Luo, L ^[2]; McGinn, J T ^[3]

---

1. Spire Corp., Bedford, MA (United States)
2. Los Alamos National Lab., NM (United States)
3. David Sarnoff Research Center, Princeton, NJ (United States)

We have investigated the dependence of electrical and material properties of buried CoSi{sub 2} layers on Co+ implantation and annealing conditions. The results indicated that the electrical resistivity and crystalline quality of the implanted buried CoSi{sub 2} layers depend strongly on the implantation temperature. CoSi{sub 2} layers with the lowest resistivity and best crystalline quality ({chi}{sub min} as low as 3.6%) were obtained from samples implanted at 300{degrees}C--400{degrees}C. Implantation at higher temperatures (e.g., 580{degrees}C) produced cobalt disilicide layers with significantly higher electrical resistivity and a {chi}{sub min} of about 10.7%.

• Research Organization: Los Alamos National Lab., NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States); National Aeronautics and Space Administration, Washington, DC (United States)
• DOE Contract Number: W-7405-ENG-36
• OSTI ID: 10135502
• Report Number(s): LA-UR--92-684; CONF-921206--3; ON: DE92010080
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601
360606
ANNEALING
COBALT IONS
COBALT SILICIDES
ELECTRIC CONDUCTIVITY
ION IMPLANTATION
LAYERS
PHYSICAL PROPERTIES
PREPARATION AND MANUFACTURE
TEMPERATURE DEPENDENCE
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION