Formation of CoSi sub 2 in SIMOX wafers by high dose Co implantation
- Oak Ridge National Lab., TN (USA) Kernforschungsanlage Juelich GmbH (Germany, F.R.). Inst. fuer Schicht- und Ionentechnik
- Kernforschungsanlage Juelich GmbH (Germany, F.R.). Inst. fuer Schicht- und Ionentechnik
- Kernforschungsanlage Juelich GmbH (Germany, F.R.). Zentralabteilung fuer Chemische Analysen
SIMOX wafers have been implanted with high doses of Co and annealed at high temperatures in order to study the formation of buried single-crystal CoSi{sub 2} layers in this material. For this study SIMOX wafers of (100) oriented Si were implanted at 100--200 keV with doses of 1.2 {minus} 2.0 {times} 10{sup 17} Co{sup +}/cm{sup 2}, and annealed in rapid thermal processor or tube furnace. As-implanted and annealed samples were analyzed by Rutherford backscattering/channeling spectroscopy (RBS), cross-sectional transmission electron microscopy (XTEM), secondary ion mass spectroscopy, and the Van der Pauw technique. The best buried CoSi{sub 2} layers were obtained at an implantation energy of 100 keV and by subsequent RTA. RBS minimum yields of {approximately}6% were obtained for the buried layer, this is the same as that reported for bulk (100) Si. The measured resistivity of 15 {mu}{Omega}-cm and XTEM confirmed the continuity of the layer. Buried CoSi{sub 2} layers were successfully produced up to an implantation energy of 180 keV. However, as the energy was increased the quality of the CoSi{sub 2} layer degraded, with minimum yields increasing to 24% at 180 keV, and with a corresponding degradation in the minimum yields in the top Si layer. At 200 keV a buried epitaxial layer was not produced. The degradation of crystal quality with ion implantation energy and the failure to produce a buried layer at 200 keV are discussed. 11 refs., 4 figs.
- Research Organization:
- Oak Ridge National Lab., TN (United States)
- Sponsoring Organization:
- DOE; USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 5488215
- Report Number(s):
- CONF-910580-3; ON: DE91015639
- Country of Publication:
- United States
- Language:
- English
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ANNEALING
COBALT COMPOUNDS
COBALT SILICIDES
CRYSTAL STRUCTURE
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
ELEMENTS
HEAT TREATMENTS
ION IMPLANTATION
MICROSCOPY
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS
SUBSTRATES
SYNTHESIS
TRANSITION ELEMENT COMPOUNDS