Back channel uniformity of thin SIMOX wafers

Conference · Sat Nov 30 23:00:00 EST 1991 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:5825967

Liu, S T ^[1]; Allen, L P ^[2]

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1. Honeywell SSEC, Plymouth, MN (US)
2. Ibis Corp., Danvers, MA (US)

This paper reports on thin top silicon layers ranging from 90-150 nm that were prepared by oxidation and etch back of SIMOX wafers. These wafers were implanted at 200 keV with oxygen doses ranging from 1.8 {times} 10{sup 18} cm{sup {minus}2} to 2.5 {times} 10{sup 18} cm{sup {minus}2} followed by a high temperature anneal. The back channel threshold voltage uniformity of these undoped thin silicon SIMOX wafers was evaluated by a new point contact transistor technique. Differences in annealing ambients may be the source of improved back channel uniformity as observed by the point contact transistor characterization technique.

• OSTI ID: 5825967
• Report Number(s): CONF-910751--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 38:6; ISSN 0018-9499; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANNEALING
CHEMICAL REACTIONS
DOSE RATES
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
ELEMENTS
ENERGY
ENERGY RANGE
EQUIPMENT
ETCHING
FILMS
HEAT TREATMENTS
ION IMPLANTATION
KEV RANGE
KEV RANGE 100-1000
LAYERS
NONMETALS
OXIDATION
OXYGEN
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
SURFACE FINISHING
THIN FILMS
THRESHOLD ENERGY
TRANSISTORS