Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

A comparison of buried oxide characteristics of single and multiple implant SIMOX and bond and etch back wafers

Conference · · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)
OSTI ID:5772227
;  [1]; ;  [2]
  1. Rome Air Development Center, Hanscom AFB, MA (USA)
  2. Northeastern Univ., Boston, MA (USA)
+ Show Author Affiliations

The current through the buried oxides of single and multiple implant SIMOX and bond and etch back silicon-on-insulator (BESOI) wafers were measured as a function of radiation dose. From these measurements, conductivity and static capacitances were derived. High frequency capacitances were also measured. Leakage current through the buried oxide of multiple implant SIMOX is considerably less than that of single implant SIMOX (more than an order of magnitude). High frequency and static capacitances, as a function of total dose, were used to study the buried oxide---top silicon interface and the buried oxide---bottom silicon interface. Multiple implant had fewer interface traps than single implant at pre-rad and after irradiation.

OSTI ID:
5772227
Report Number(s):
CONF-900723--
Journal Information:
IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Vol. 37:6; ISSN 0018-9499; ISSN IETNA
Country of Publication:
United States
Language:
English

Similar Records

Charge trapping and transport properties of SIMOX buried oxides with a supplemental oxygen implant
Conference · Tue Nov 30 23:00:00 EST 1993 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) · OSTI ID:6953189
Paramagnetic defect centers in BESOI and SIMOX buried oxides
Conference · Tue Nov 30 23:00:00 EST 1993 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) · OSTI ID:6908036
Back channel uniformity of thin SIMOX wafers
Conference · Sat Nov 30 23:00:00 EST 1991 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) · OSTI ID:5825967

Related Subjects

42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CAPACITANCE
CHALCOGENIDES
CORRELATIONS
DOSE RATES
ELECTRIC CONDUCTIVITY
ELECTRICAL EQUIPMENT
ELECTRICAL INSULATORS
ELECTRICAL PROPERTIES
ELEMENTS
EQUIPMENT
ETCHING
FREQUENCY DEPENDENCE
INTERFACES
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
SURFACE FINISHING
TRAPPING