New interface structure for [ital A]-type CoSi[sub 2]/Si(111)

Journal Article · Mon May 02 04:00:00 EDT 1994 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.111583· OSTI ID:5112827

Chisholm, M F; Pennycook, S J ^[1]; Jebasinski, R; Mantl, S ^[2]

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1. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6030 (United States)
2. Institut fuer Schicht- und Ionentechnik, Forschungszentrum Juelich, W-5170 Juelich (Germany)

A new model of a CoSi[sub 2]/Si(111) interface structure has been generated using images produced by [ital Z]-contrast scanning transmission electron microscopy. The images indicate that the top and bottom interfaces between the type-[ital A] buried CoSi[sub 2] layer and Si(111) both have eightfold coordinated Co atoms. This is accomplished by converting the one interface structure from sevenfold to eightfold coordination by locating a twinned layer of Si at the interface. The preference for this interface over the sevenfold type-[ital A] structure is in agreement with theoretical predictions.

• OSTI ID: 5112827
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 64:18; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
COBALT COMPOUNDS
COBALT SILICIDES
ELEMENTS
ENERGY RANGE
INTERFACES
ION IMPLANTATION
KEV RANGE
KEV RANGE 100-1000
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS
TEMPERATURE RANGE
TEMPERATURE RANGE 0400-1000 K
TRANSITION ELEMENT COMPOUNDS