Structure, interface roughness, and growth mechanism of reactive deposition epitaxy of CoSi{sub 2} on Si(100) substrates
Thin CoSi{sub 2} films have been grown on Si(100) substrates using the relative deposition epitaxy method. The structure of the silicide films have been analyzed using x-ray diffraction, transmission electron microscopy (TEM), and Rutherford backscattering spectrometry and channeling, and the interface roughness of the CoSi{sub 2}/Si(100) is analyzed using specular x-ray reflectivity and cross-sectional TEM. The structure and interface roughness of CoSi{sub 2}/Si(100) is found to be dependent on the substrate temperature. Highly epitaxial CoSi{sub 2} with minimum interface roughness is obtained when the film is grown at substrate temperatures around 900 K. The observed interface roughness is a parabolic function of temperature. The achievement of the best silicide at a substrate temperature around 900 K is explained on the basis of the instantaneous diffusion of Co through growing CoSi{sub 2}. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40203166
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 23 Vol. 78; ISSN 0003-6951
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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