Fabrication of epitaxial CoSi{sub 2} nanowires
We have developed a method for fabricating epitaxial CoSi{sub 2} nanowires using only conventional optical lithography and standard silicon processing steps. This method was successfully applied to ultrathin epitaxial CoSi{sub 2} layers grown on Si(100) and silicon-on-insulator substrates. A nitride mask induces a stress field near its edges into the CoSi{sub 2}/Si heterostructure and leads to the separation of the CoSi{sub 2} layer in this region during a rapid thermal oxidation step. A subsequent etching step and a second oxidation generate highly homogenous silicide wires with dimensions down to 50 nm. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40230717
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 6 Vol. 79; ISSN 0003-6951
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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