Structure and epitaxy studies of cobalt silicide/silicon heterostructures

Thesis/Dissertation · Tue Jan 01 04:00:00 EST 1991

OSTI ID:7109507

Zaluzec, M J

When considering transition metal silicides for use in integrated circuit technology, CoSi{sub 2} stands out as a silicide possessing an excellent combination of properties. However, the detrimental effects of CoSi{sub 2} pinhole formation seriously restricts the applicability of this silicide system. This study examines the structure/processing/property relationship of thin film cobalt silicide/silicon heterostructures grown on Si(111). The two primary objectives were: (1) identify the basic mechanisms associated with pinhole formation and cobalt silicide thin film growth; and (2) characterization of cobalt silicides grown by Si{sub a}/Co/Si{sub c} multilayer deposition and reaction and the effect this deposition technique has on the microstructure of cobalt silicide thin films. Interfacial pinhole formation was identified at the CoSi/Si interface and involves several active mechanisms. Epitaxial pinhole free CoSi{sub 2} films were grown by single-step annealing Si{sub a}/Co/Si{sub c} multilayer structures. Two step annealing Si{sub a}/Co/Si{sub c} multilayer thin films results in polycrystalline CoSi{sub 2}.

• Research Organization: Illinois Univ., Urbana, IL (United States)
• OSTI ID: 7109507
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602 -- Other Materials-- Structure & Phase Studies
42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
COBALT COMPOUNDS
COBALT SILICIDES
CRYSTAL GROWTH
CRYSTAL STRUCTURE
ELECTRONIC CIRCUITS
ELEMENTS
EPITAXY
FILMS
HETEROJUNCTIONS
INTEGRATED CIRCUITS
INTERFACES
JUNCTIONS
MICROELECTRONIC CIRCUITS
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS
THIN FILMS
TRANSITION ELEMENT COMPOUNDS