Selective-area growth of GaN nanowires on SiO{sub 2}-masked Si (111) substrates by molecular beam epitaxy

Journal Article · Tue Jun 14 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4953594· OSTI ID:22596789

Kruse, J. E.; Doundoulakis, G. ^[1]; Lymperakis, L. ^[2]; Eftychis, S.; Adikimenakis, A.; Tsagaraki, K.; Androulidaki, M.; Konstantinidis, G. ^[3]; Olziersky, A.; Dimitrakis, P.; Ioannou-Sougleridis, V.; Normand, P. ^[4]; Koukoula, T.; Kehagias, Th.; Komninou, Ph. ^[5]

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1. Department of Physics, University of Crete, P. O. Box 2208, 71003 Heraklion (Greece)
2. Max-Planck-Institut für Eisenforschung, Max-Planck-Straße 1, 40237 Düsseldorf (Germany)
3. Institute of Electronic Structure and Laser, Foundation for Research and Technology–Hellas, N. Plastira 100, 70013 Heraklion (Greece)
4. Institute of Nanoscience and Nanotechnology, NCSR Demokritos, Patriarchou Grigoriou and Neapoleos 27, 15310 Aghia Paraskevi, Athens (Greece)
5. Department of Physics, Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece)

We analyze a method to selectively grow straight, vertical gallium nitride nanowires by plasma-assisted molecular beam epitaxy (MBE) at sites specified by a silicon oxide mask, which is thermally grown on silicon (111) substrates and patterned by electron-beam lithography and reactive-ion etching. The investigated method requires only one single molecular beam epitaxy MBE growth process, i.e., the SiO{sub 2} mask is formed on silicon instead of on a previously grown GaN or AlN buffer layer. We present a systematic and analytical study involving various mask patterns, characterization by scanning electron microscopy, transmission electron microscopy, and photoluminescence spectroscopy, as well as numerical simulations, to evaluate how the dimensions (window diameter and spacing) of the mask affect the distribution of the nanowires, their morphology, and alignment, as well as their photonic properties. Capabilities and limitations for this method of selective-area growth of nanowires have been identified. A window diameter less than 50 nm and a window spacing larger than 500 nm can provide single nanowire nucleation in nearly all mask windows. The results are consistent with a Ga diffusion length on the silicon dioxide surface in the order of approximately 1 μm.

• OSTI ID: 22596789
• Journal Information: Journal of Applied Physics, Vol. 119, Issue 22; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM NITRIDES
DIFFUSION LENGTH
ELECTRON BEAMS
ELECTRONS
ETCHING
GALLIUM NITRIDES
IONS
LAYERS
MOLECULAR BEAM EPITAXY
MOLECULAR BEAMS
MORPHOLOGY
NANOWIRES
PHOTOLUMINESCENCE
SCANNING ELECTRON MICROSCOPY
SILICA
SILICON
SILICON OXIDES
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY