A scanning tunneling microscope using dual-axes inchworms for the observation of a cleaved semiconductor surface

Journal Article · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

DOI:https://doi.org/10.1116/1.585392· OSTI ID:7305641

Kato, T; Osaka, F; Tanaka, I; Ohkouchi, S ^[1]

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1. Optoelectronics Technology Research Lab., Ibaraki (Japan)

The authors have constructed a new scanning tunneling microscope (STM) that uses x and z inchworms for micropositioning in an ultrahigh vacuum environment. One (z inchworm) is for approaching the tip to the sample surface and the other (x inchworm) is for both cleaving the sample and moving the sample to positions of interest. This paper demonstrates that this STM is very useful for observing the cross section of a thin epitaxial layer, such as the cleaved (110) surface of a Ga{sub 0.47}In{sub 0.53}As/InP multiquantum well (MQW) structure. The STM image of GaInAs well layers and InP barrier layers has been shown to reflect the feature of the MQW potential. Moreover, they have obtained images of the filled states on the group-V anions in the GaInAs and the InP layers.

• OSTI ID: 7305641
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 9:4; ISSN 0734-211X; ISSN JVTBD
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400102* -- Chemical & Spectral Procedures
ARSENIC COMPOUNDS
ARSENIDES
CLEAVAGE
CRYSTAL STRUCTURE
DESIGN
ELECTRON MICROSCOPES
ELECTRON MICROSCOPY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
MICROSCOPES
MICROSCOPY
MICROSTRUCTURE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
POSITIONING
SAMPLE HOLDERS
SAMPLE PREPARATION
SCANNING ELECTRON MICROSCOPY
ULTRAHIGH VACUUM