Scanning tunneling microscopy of GaInAs/InP multiquantum well (110) surfaces observed under an ultrahigh vacuum

Journal Article · Thu Jul 01 04:00:00 EDT 1993 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.586507· OSTI ID:161752

Osaka, Fukunobu; Kato, Takashi ^[1]

---

1. Optoelectronics Technology Research Lab., Ibaraki (Japan)

A scanning tunneling microscopy study of GaInAs/InP multiquantum well (MQW) (110) surfaces cleaved under an ultrahigh vacuum is described. Constant-current mode images show that the tip position is always higher on GaInAs well layers than on InP barrier layers. From measurements of samples having different doping concentrations it is found that the tip-height change reflects the potential shape of the MQW structure. A theoretical analysis, including the spreading resistance effect, for the bias voltage dependence of the tip-height difference between the two layers makes clear that this difference is mainly determined by the differences both in the state density and in the barrier height between the two layers, and that the spreading resistance effect cannot be neglected for a sample having a low doping concentration. The analysis also shows that the band offset of a GaInAs/InP heterointerface can be determined by comparing the theory with the experiment. 16 refs., 5 figs., 1 tab.

• OSTI ID: 161752
• Report Number(s): CONF-930115--
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 4 Vol. 11; ISSN JVTBD9; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTRIC POTENTIAL
ELECTRONIC STRUCTURE
GALLIUM ARSENIDES
IMAGES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
LAYERS
MICROSCOPY
PHYSICAL PROPERTIES
ULTRAHIGH VACUUM