InP-based quantum well solar cells grown by chemical beam epitaxy

Book · Fri Dec 30 23:00:00 EST 1994

OSTI ID:191147

Freundlich, A; Rossignol, V; Vilela, M F; Renaud, P ^[1]; Bensaoula, A; Medelci, N ^[2]

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1. Univ. of Houston, TX (United States). Space Vacuum Epitaxy Center
2. International Stellar Technologies Inc., Houston, TX (United States)

The authors present the first experimental investigation of InP based-multiquantum well (MQW) solar cells. Lattice matched In{sub 0.47}Ga{sub 0.53}As/InP and strained InAs{sub x}P{sub 1{minus}x}/InP (x = 0.3 to 0.7) multiquantum well were introduced in the intrinsic region of a p-i(MQW)-n InP solar cell. All device structures (MQW and InP p and n layer) were grown by chemical beam epitaxy.

• OSTI ID: 191147
• Report Number(s): CONF-941203--; ISBN 0-7803-1459-X
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
BERYLLIUM
CURRENT DENSITY
DOPED MATERIALS
EFFICIENCY
ELECTRIC POTENTIAL
ELECTRON DIFFRACTION
EPITAXY
EXPERIMENTAL DATA
FILL FACTORS
GALLIUM ARSENIDE SOLAR CELLS
GALLIUM ARSENIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDE SOLAR CELLS
INDIUM PHOSPHIDES
ORGANOMETALLIC COMPOUNDS
PERFORMANCE
SILICON
SPECTRAL RESPONSE
X-RAY DIFFRACTION