Thin-base high efficiency InAs{sub x}P{sub 1{minus}x}/InP multi quantum well solar cells
Conference
·
OSTI ID:304404
- Univ. of Houston, TX (United States). Space Vacuum Epitaxy Center
Thin base (0.25--0.8 micron-thick) InAs{sub x}P{sub 1{minus}x}/InP multiquantum well p-i-n solar cells are fabricated by chemical beam epitaxy. An improvement of interface sharpness in the MQW region and the optimization of the cell design (emitter/base thickness and doping level) lead to an Air Mass zero (AM0) efficiency comparable to conventional thick base (>2 microns) P{sup +}/N InP solar cells, making these cells particularly suitable for applications where reduced minority carrier diffusion length are expected.
- OSTI ID:
- 304404
- Report Number(s):
- CONF-970953--
- Country of Publication:
- United States
- Language:
- English
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