Strained-layer-superlattice technology for vertical-cavity optoelectronic modulators at near-infrared wavelengths
- Sandia National Lab., Albuquerque, NM (United States)
The authors present recent results on vertical Fabry-Perot cavity reflectance modulators grown using strained-layer epitaxy in the (InAlGas) As material system. Using molecular-beam epitaxy, they have successfully developed devices operating at wavelengths between 1.0 and 1.3 [mu]m. The approach employs a novel combination of strained and unstrained multilayers grown in a mechanically stable configuration to reach wavelengths longer than possible with lattice-matched (AlGa)As materials. The key to successful device operation is the growth of high-quality strain-relaxed buffer layers to provide an appropriate lattice constant for subsequent growth of the active device structure. For devices operating at 1.3 [mu]m, they use buffer compositions graded to a final mismatch to the GaAs substrates of 2.4%. They discuss the optimization of surface smoothness of these relaxed buffers with respect of composition and growth temperature. They also investigate the dependence on growth temperature of the quality of the device's mirror stacks and superlattice active regions. An optimized modulator structure has an rms surface roughness of 8.2 nm, corresponding to a calculated degradation in specular reflectance of only 0.4%. This device, which has a one-wavelength-thick cavity region, was designed for free-space communications applications. It has a 4:1 contrast ratio, exhibits a 4-dB insertion loss, and operates at a 5.5-V applied bias.
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 7300993
- Journal Information:
- IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States), Vol. 30:2; ISSN 0018-9197
- Country of Publication:
- United States
- Language:
- English
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Fabry--Perot reflectance modulator for 1. 3 [mu]m from (InAlGa)As materials grown at low temperature
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Related Subjects
SEMICONDUCTOR DEVICES
SUPERLATTICES
ALUMINIUM ARSENIDES
DESIGN
GALLIUM ARSENIDES
INDIUM ARSENIDES
MODULATION
MOLECULAR BEAM EPITAXY
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
PNICTIDES
426000* - Engineering- Components
Electron Devices & Circuits- (1990-)