Strain-relaxed InGaAs buffer layers grown by molecular-beam epitaxy for 1. 3 [mu]m Fabry-Perot optical modulators

Conference · Wed Jan 01 04:00:00 EST 1992

OSTI ID:7072072

Hammons, B E; Fritz, I J; Brennan, T M; Howard, A J; Olsen, J A

The effects of various growth temperatures on molecular-beam epitaxially (MBE) grown compositionally graded, In[sub 0.33]Ga[sub 0.67]As buffers and 1.33 [mu]m optoelectronic device structures were investigated. Buffer structures grown at 400[degrees]C on GaAs substrates showed >99.5% lattice relaxation with minimal threading dislocation content. Multiple quantum well superlattices grown at 400[degrees]C upon this buffer exhibited strong excitonic absorption at 1.33 [mu]m and good surface morphology with slight cross-hatching. A Fabry-Perot-cavity reflectance modulator grown at 400[degrees]C on this buffer exhibited strong excitonic absorption and good reflectance contrast at 1.33 [mu]m.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: DOE; USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 7072072
• Report Number(s): SAND-92-1692C; CONF-9210296--1; ON: DE93006774
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
440600 -- Optical Instrumentation-- (1990-)
47 OTHER INSTRUMENTATION
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH
EPITAXY
FABRY-PEROT INTERFEROMETER
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INTERFEROMETERS
LAYERS
MEASURING INSTRUMENTS
MOLECULAR BEAM EPITAXY
PNICTIDES
SUBSTRATES
TEMPERATURE DEPENDENCE