Fabry--Perot reflectance modulator for 1. 3 [mu]m from (InAlGa)As materials grown at low temperature

Journal Article · Mon Mar 01 00:00:00 EST 1993 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.108519· OSTI ID:6767565

Fritz, I J; Hammons, B E; Howard, A J; Brennan, T M; Olsen, J A ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

We report the first all-semiconductor Fabry--Perot-cavity reflectance modulators operating at wavelengths of 1.32--1.33 [mu]m. These devices were grown on a GaAs substrate using an intermediate, linearly graded InGaAs buffer layer terminating in an In[sub 0.33]Ga[sub 0.67]As layer. The Bragg reflector stacks of the Fabry--Perot structure are composed of InGaAs and InAlAs layers lattice matched to the buffer, and the active cavity region is an In[sub 0.4]Ga[sub 0.6]As/In[sub 0.26]Al[sub 0.35]Ga[sub 0.39]As strained-layer superlattice. The key to obtaining device-quality material was low temperature growth ([similar to]400 [degree]C) of the entire structure. For a device with a 0.38-[mu]m-thick active region and a 4 dB insertion loss, we obtained a contrast ratio of [similar to]3:1 at 4 V bias.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6767565
• Journal Information: Applied Physics Letters; (United States), Vol. 62:9; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
36 MATERIALS SCIENCE
SEMICONDUCTOR DEVICES
GROWTH
ALUMINIUM ARSENIDES
BRAGG REFLECTION
FABRY-PEROT INTERFEROMETER
GALLIUM ARSENIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
MOLECULAR BEAM EPITAXY
REFLECTIVITY
SUPERLATTICES
TEMPERATURE EFFECTS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INTERFEROMETERS
JUNCTIONS
MEASURING INSTRUMENTS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
REFLECTION
SEMICONDUCTOR JUNCTIONS
SURFACE PROPERTIES
426000* - Engineering- Components
Electron Devices & Circuits- (1990-)
360601 - Other Materials- Preparation & Manufacture