Fabry--Perot reflectance modulator for 1. 3 [mu]m from (InAlGa)As materials grown at low temperature

Journal Article · Mon Mar 01 04:00:00 EST 1993 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.108519· OSTI ID:6767565

Fritz, I J; Hammons, B E; Howard, A J; Brennan, T M; Olsen, J A ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

We report the first all-semiconductor Fabry--Perot-cavity reflectance modulators operating at wavelengths of 1.32--1.33 [mu]m. These devices were grown on a GaAs substrate using an intermediate, linearly graded InGaAs buffer layer terminating in an In[sub 0.33]Ga[sub 0.67]As layer. The Bragg reflector stacks of the Fabry--Perot structure are composed of InGaAs and InAlAs layers lattice matched to the buffer, and the active cavity region is an In[sub 0.4]Ga[sub 0.6]As/In[sub 0.26]Al[sub 0.35]Ga[sub 0.39]As strained-layer superlattice. The key to obtaining device-quality material was low temperature growth ([similar to]400 [degree]C) of the entire structure. For a device with a 0.38-[mu]m-thick active region and a 4 dB insertion loss, we obtained a contrast ratio of [similar to]3:1 at 4 V bias.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6767565
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 62:9; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BRAGG REFLECTION
EPITAXY
FABRY-PEROT INTERFEROMETER
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GROWTH
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INTERFEROMETERS
JUNCTIONS
MEASURING INSTRUMENTS
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
REFLECTION
REFLECTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SUPERLATTICES
SURFACE PROPERTIES
TEMPERATURE EFFECTS