Novel reflectance modulator employing an InGaAs/AlGaAs strained-layer superlattice Fabry--Perot cavity with unstrained InGaAs/InAlAs mirrors

Journal Article · Mon Apr 15 00:00:00 EDT 1991 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.105140· OSTI ID:5528465

Fritz, I J; Myers, D R; Vawter, G A; Brennan, T M; Hammons, B E ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (US)

We present a novel approach to optoelectronic devices by combining mechanically stable strained and unstrained epitaxial multilayers. We illustrate our approach with an optical reflectance modulator based on an asymmetric Fabry--Perot resonator designed to operate near 1.06 {mu}m. The resonator is grown on a mechanically relaxed buffer of In{sub 0.11}Ga{sub 0.89}As deposited on a GaAs substrate. For mirrors, quarter-wave stacks of In{sub 0.11}Ga{sub 0.89}As and In{sub 0.1}Al{sub 0.9}As, lattice matched to the buffer, are used. The Fabry--Perot cavity consists of an In{sub 0.23}Ga{sub 0.77}As/Al{sub 0.35}Ga{sub 0.65}As strained-layer superlattice whose planar lattice constant also matches the buffer. Our first device operates at 1.04--1.05 {mu}m depending on lateral position across the wafer. The insertion loss at resonance is less than 2 db and a fractional modulation of over 60% has been achieved with a 4 V bias swing.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5528465
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 58:15; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

440800* -- Miscellaneous Instrumentation-- (1990-)
47 OTHER INSTRUMENTATION
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DESIGN
ELECTRO-OPTICAL EFFECTS
EQUIPMENT
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
MIRRORS
MODULATION
NATIONAL ORGANIZATIONS
OPERATION
OPTICAL EQUIPMENT
PNICTIDES
SANDIA LABORATORIES
US AEC
US DOE
US ERDA
US ORGANIZATIONS