Novel reflectance modulator employing an InGaAs/AlGaAs strained-layer superlattice Fabry--Perot cavity with unstrained InGaAs/InAlAs mirrors

Journal Article · Mon Apr 15 00:00:00 EDT 1991 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.105140· OSTI ID:5528465

Fritz, I J; Myers, D R; Vawter, G A; Brennan, T M; Hammons, B E ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (US)

We present a novel approach to optoelectronic devices by combining mechanically stable strained and unstrained epitaxial multilayers. We illustrate our approach with an optical reflectance modulator based on an asymmetric Fabry--Perot resonator designed to operate near 1.06 {mu}m. The resonator is grown on a mechanically relaxed buffer of In{sub 0.11}Ga{sub 0.89}As deposited on a GaAs substrate. For mirrors, quarter-wave stacks of In{sub 0.11}Ga{sub 0.89}As and In{sub 0.1}Al{sub 0.9}As, lattice matched to the buffer, are used. The Fabry--Perot cavity consists of an In{sub 0.23}Ga{sub 0.77}As/Al{sub 0.35}Ga{sub 0.65}As strained-layer superlattice whose planar lattice constant also matches the buffer. Our first device operates at 1.04--1.05 {mu}m depending on lateral position across the wafer. The insertion loss at resonance is less than 2 db and a fractional modulation of over 60% has been achieved with a 4 V bias swing.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5528465
• Journal Information: Applied Physics Letters; (USA), Vol. 58:15; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

47 OTHER INSTRUMENTATION
ALUMINIUM ARSENIDES
ELECTRO-OPTICAL EFFECTS
GALLIUM ARSENIDES
INDIUM ARSENIDES
OPTICAL EQUIPMENT
DESIGN
MIRRORS
MODULATION
OPERATION
SANDIA LABORATORIES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
EQUIPMENT
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
NATIONAL ORGANIZATIONS
PNICTIDES
US AEC
US DOE
US ERDA
US ORGANIZATIONS
440800* - Miscellaneous Instrumentation- (1990-)