Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Strain-relaxed InGaAs buffer layers grown by molecular-beam epitaxy for 1.3 {mu}m Fabry-Perot optical modulators

Conference ·
OSTI ID:10134087
The effects of various growth temperatures on molecular-beam epitaxially (MBE) grown compositionally graded, In{sub 0.33}Ga{sub 0.67}As buffers and 1.33 {mu}m optoelectronic device structures were investigated. Buffer structures grown at 400{degrees}C on GaAs substrates showed >99.5% lattice relaxation with minimal threading dislocation content. Multiple quantum well superlattices grown at 400{degrees}C upon this buffer exhibited strong excitonic absorption at 1.33 {mu}m and good surface morphology with slight cross-hatching. A Fabry-Perot-cavity reflectance modulator grown at 400{degrees}C on this buffer exhibited strong excitonic absorption and good reflectance contrast at 1.33 {mu}m.
Research Organization:
Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Organization:
USDOE, Washington, DC (United States)
DOE Contract Number:
AC04-76DP00789
OSTI ID:
10134087
Report Number(s):
SAND--92-1692C; CONF-9210296--1; ON: DE93006774
Country of Publication:
United States
Language:
English