Strain-relaxed InGaAs buffer layers grown by molecular-beam epitaxy for 1.3 {mu}m Fabry-Perot optical modulators
Conference
·
OSTI ID:10134087
The effects of various growth temperatures on molecular-beam epitaxially (MBE) grown compositionally graded, In{sub 0.33}Ga{sub 0.67}As buffers and 1.33 {mu}m optoelectronic device structures were investigated. Buffer structures grown at 400{degrees}C on GaAs substrates showed >99.5% lattice relaxation with minimal threading dislocation content. Multiple quantum well superlattices grown at 400{degrees}C upon this buffer exhibited strong excitonic absorption at 1.33 {mu}m and good surface morphology with slight cross-hatching. A Fabry-Perot-cavity reflectance modulator grown at 400{degrees}C on this buffer exhibited strong excitonic absorption and good reflectance contrast at 1.33 {mu}m.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 10134087
- Report Number(s):
- SAND--92-1692C; CONF-9210296--1; ON: DE93006774
- Country of Publication:
- United States
- Language:
- English
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