Heterojunction internal photoemission Si[sub 0. 7]Ge[sub 0. 3]/Si infrared detector

Journal Article · Mon Feb 28 23:00:00 EST 1994 · Optical Engineering; (United States)

DOI:https://doi.org/10.1117/12.163403· OSTI ID:7300823

Lin, T L; Park, J S; Gunapala, S D; Jones, E W; Del Castillo, H M ^[1]

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1. California Inst. of Technology, Pasadena, CA (United States). Jet Propulsion Lab.

Single-layer and multilayer Si[sub 0.7]Ge[sub 0.3]/Si heterojunction internal photoemission (HIP) detectors with cutoff wavelengths out to [approximately]23 [mu]m have been demonstrated. Near-ideal thermionic emission dark current characteristics and photoresponse at wavelengths up to 20 [mu]m were measured. The cutoff wavelength [lambda][sub c] and emission coefficient C[sub 1] of the HIP detectors were determined by the modified Fowler plot at the wavelength regime where the corresponding photon energies were smaller than the Fermi energy ([approximately]0.15 eV) of the degenerate Si[sub 0.7]Ge[sub 0.3] layers. Similar optical and thermal potential barriers were obtained. The use of multiple Si[sub 0.7]Ge[sub 0.3]/Si layers in the stacked HIP detector structure resulted in a significantly increased emission coefficient C[sub 1] compared to the single-layer HIP detectors due to an enhanced internal photoemission efficiency without the loss of IR absorption.

• OSTI ID: 7300823
• Journal Information: Optical Engineering; (United States), Journal Name: Optical Engineering; (United States) Vol. 33:3; ISSN 0091-3286; ISSN OPEGAR
• Country of Publication: United States
• Language: English

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47 OTHER INSTRUMENTATION
DETECTION
ELECTROMAGNETIC RADIATION
ELEMENTS
FUNCTIONS
GERMANIUM COMPOUNDS
GERMANIUM SILICIDES
INFRARED RADIATION
JUNCTION DETECTORS
MEASURING INSTRUMENTS
PERFORMANCE
RADIATION DETECTION
RADIATION DETECTORS
RADIATIONS
READOUT SYSTEMS
RESPONSE FUNCTIONS
SEMICONDUCTOR DETECTORS
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS