Silicide/strained Si[sub 1[minus]x]Ge[sub x] Schottky-barrier infrared detectors

Journal Article · Wed Mar 31 23:00:00 EST 1993 · IEEE Electron Device Letters (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/55.215151· OSTI ID:6780625

Xiao, X; Sturm, J C; Parihar, S R; Lyon, S A ^[1]; Meyerhofer, D; Palfrey, S; Shallcross, F V ^[2]

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1. Princeton Univ., NJ (United States)
2. David Sarnoff Research Center, Princeton, NJ (United States)

By employing a thin silicon sacrificial cap layer for silicide formation the authors have successfully demonstrated Pd[sub 2]Si/ strained Si[sub 1[minus]x]Ge[sub x] Schottky-barrier infrared detectors with extended cutoff wavelengths. The sacrificial silicon eliminates the segregation effects and Fermi level pinning which occur if the metal reacts directly with the Si[sub 1[minus]x]Ge[sub x] alloy. The Schottky barrier height of the silicide/strained Si[sub 1[minus]x]Ge[sub x] detector decreases with increasing Ge fraction, allowing for tuning of the detector's cutoff wavelength. The cutoff wavelength has been extended beyond 8[mu]m in PtSi/Si[sub 0.85]Ge[sub 0.15] detectors. The authors have shown that high quantum efficiency and near-ideal dark current can be obtained from these detectors.

• OSTI ID: 6780625
• Journal Information: IEEE Electron Device Letters (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Electron Device Letters (Institute of Electrical and Electronics Engineers); (United States) Vol. 14:4; ISSN 0741-3106; ISSN EDLEDZ
• Country of Publication: United States
• Language: English

Related Subjects

440500* -- Thermal Instrumentation-- (1990-)
47 OTHER INSTRUMENTATION
DATA
DESIGN
DETECTION
EFFICIENCY
ELECTROMAGNETIC RADIATION
EXPERIMENTAL DATA
INFORMATION
INFRARED RADIATION
MEASURING INSTRUMENTS
NUMERICAL DATA
QUANTUM EFFICIENCY
RADIATION DETECTION
RADIATION DETECTORS
RADIATIONS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES