Photoresponse model for Si[sub (1[minus]x)]Ge[sub x]/Si heterojunction internal photoemission infrared detector

Journal Article · Mon Feb 28 23:00:00 EST 1994 · IEEE Electron Device Letters (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/55.285388· OSTI ID:7234980

Lin, T L; Park, J S; Gunapala, S D; Jones, E W; Del Castillo, H M ^[1]

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1. California Inst. of Technology, Pasadena, CA (United States). Jet Propulsion Lab.

A photoresponse model has been developed for the Si[sub 1[minus]x]Ge[sub x]/Si heterojunction internal photoemission (HIP) infrared detector at wavelengths corresponding to photon energies less than the Fermi energy. A Si[sub 0.7]Ge[sub 0.3]/Si HIP detector with a cutoff wavelength of 23 [mu]m and an emission coefficient of 0.4 eV[sup [minus]1] has been demonstrated. The model agrees with the measured detector response at [lambda]>8 [mu]m. The potential barrier determined by the model is in close agreement (difference [approximately]4 meV) with the potential barrier determined by the Richardson plot, compared to the discrepancies of 20--50 meV usually observed for PtSi Schottky detectors.

• OSTI ID: 7234980
• Journal Information: IEEE Electron Device Letters (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Electron Device Letters (Institute of Electrical and Electronics Engineers); (United States) Vol. 15:3; ISSN 0741-3106; ISSN EDLEDZ
• Country of Publication: United States
• Language: English

Related Subjects

440500* -- Thermal Instrumentation-- (1990-)
47 OTHER INSTRUMENTATION
CHEMICAL COMPOSITION
DETECTION
ELECTROMAGNETIC RADIATION
ELEMENTS
FUNCTIONS
GERMANIUM COMPOUNDS
GERMANIUM SILICIDES
INFRARED RADIATION
JUNCTION DETECTORS
MATHEMATICAL MODELS
MEASURING INSTRUMENTS
POTENTIALS
RADIATION DETECTION
RADIATION DETECTORS
RADIATIONS
READOUT SYSTEMS
RESPONSE FUNCTIONS
SEMICONDUCTOR DETECTORS
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS