Heterojunction Ge[sub x]Si[sub 1[minus]x]/Si infrared detectors and focal plane arrays
Journal Article
·
· Optical Engineering; (United States)
- Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.
Heterojunction Ge[sub x]Si[sub 1[minus]x]/Si internal-photoemission infrared detectors are being developed for multispectral imaging in the middle-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) spectral bands. The detectors, which are fabricated by molecular beam epitaxy of degenerately doped Ge[sub x]Si[sub 1[minus]x] heteroepitaxial layers on Si, exhibit high responsivity uniformity, low dark-current noise, tunable cutoff wavelength out to 25 [mu]m, and excellent producibility. High-quality MWIR and LWIR thermal imagery has been obtained for 320- x 244- and 400- x 400-element focal plane arrays consisting of Ge[sub x]Si[sub 1[minus]x]/Si detectors with cutoff wavelength of [approximately]10[mu]m and monolithic CCD readout circuitry.
- OSTI ID:
- 5353139
- Journal Information:
- Optical Engineering; (United States), Journal Name: Optical Engineering; (United States) Vol. 33:1; ISSN 0091-3286; ISSN OPEGAR
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
440500* -- Thermal Instrumentation-- (1990-)
47 OTHER INSTRUMENTATION
DESIGN
DETECTION
ELECTROMAGNETIC RADIATION
ELEMENTS
FABRICATION
GERMANIUM COMPOUNDS
GERMANIUM SILICIDES
INFRARED RADIATION
MEASURING INSTRUMENTS
PERFORMANCE
RADIATION DETECTION
RADIATION DETECTORS
RADIATIONS
SEMICONDUCTOR DETECTORS
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS
THERMAL RADIATION
47 OTHER INSTRUMENTATION
DESIGN
DETECTION
ELECTROMAGNETIC RADIATION
ELEMENTS
FABRICATION
GERMANIUM COMPOUNDS
GERMANIUM SILICIDES
INFRARED RADIATION
MEASURING INSTRUMENTS
PERFORMANCE
RADIATION DETECTION
RADIATION DETECTORS
RADIATIONS
SEMICONDUCTOR DETECTORS
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS
THERMAL RADIATION