Use of nuclear reactions and SIMS for quantitative depth profiling of hydrogen in amorphous silicon

Journal Article · Mon Oct 31 23:00:00 EST 1977 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.89787· OSTI ID:7298757

Clark, G J; White, C W; Allred, D D; Appleton, B R; Magee, C W; Carlson, D E

Depth profiles for hydrogen in amorphous silicon have been determined by the use of resonant nuclear reactions (/sup 1/H(/sup 15/N,..cap alpha gamma..)/sup 12/C and /sup 1/H(/sup 19/F,..cap alpha gamma..)/sup 16/O) and by secondary ion mass spectroscopy (SIMS). Independent calibration procedures were used for the two techniques. Measurements were made on the same amorphous silicon film to provide a direct comparison of the two hydrogen analysis techniques. The hydrogen concentration in the bulk of the film was determined to be about 9 at.% H. The SIMS results agree with the resonant nuclear reaction results to within 10%, which demonstrates that quantitative hydrogen depth profiles can be obtained by SIMS analysis for materials such as amorphous silicon.

• Research Organization: Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830
• OSTI ID: 7298757
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 31:9; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400101* -- Activation
Nuclear Reaction
Radiometric & Radiochemical Procedures
AMORPHOUS STATE
CHEMICAL ANALYSIS
CRYOGENIC FLUIDS
DEPTH
DIMENSIONS
DISTRIBUTION
ELEMENTS
FILMS
FLUIDS
HYDROGEN
IMPURITIES
MASS SPECTROSCOPY
NONMETALS
NUCLEAR REACTION ANALYSIS
QUANTITATIVE CHEMICAL ANALYSIS
SEMIMETALS
SILICON
SPECTROSCOPY