Determination of depth profile of an implanted ion species

Thesis/Dissertation · Sun Jan 01 04:00:00 EST 1984

OSTI ID:5548475

Musameh, S M.S.

A series of silicon and graphite targets implanted with fluorine (F), arsenic (As) and with surface films grown by different methods were studied by means of backscattering and resonant nuclear reaction to find the depth profile of these films. The shape of the profile is approximately Gaussian. The dose of the implantation was in the range of 10/sup 14/ to 2 x 10/sup 16/ atoms/cm/sup 2/. The projected range of the implantation was between 400 and 8000 angstroms. Backscattering was found to be an accurate method of determining the impurities in the implanted films, especially those with high atomic number compared with the substrate, as well as for the surface films grown by chemical vapor deposition. The nuclear reaction /sup 19/F(P,..cap alpha../sub ..gamma../)/sup 16/O was used to trace the existence of fluorine and to find the projected range of the implantation. Another reaction /sup 19/F(P,..cap alpha../sub 0/)/sup 16/O also was used for the samples implanted with fluorine and it was found that the width of the resonance peaks are large compared with the previous reaction. So the location of the resonance is not definite. The projected range of the implanted As in Si was found to be in agreement with the theoretical calculation in the literature. The projected range of F in Si however was lower than the theoretical values quoted in the literature.

• Research Organization: North Carolina State Univ., Raleigh (USA)
• OSTI ID: 5548475
• Country of Publication: United States
• Language: English

Related Subjects

640301* -- Atomic
Molecular & Chemical Physics-- Beams & their Reactions
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ARSENIC IONS
BACKSCATTERING
CARBON
CHARGED PARTICLES
ELEMENTAL MINERALS
ELEMENTS
FILMS
FLUORINE IONS
GRAPHITE
IMPURITIES
ION IMPLANTATION
IONS
MINERALS
NONMETALS
RANGE
SCATTERING
SEMIMETALS
SILICON
THIN FILMS