Fluorine in low-pressure chemical vapor deposited W/Si contact structures: Inclusion and thermal stability

Journal Article · Mon May 25 04:00:00 EDT 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.97811· OSTI ID:6617816

Whitlow, H J; Eriksson, T; O-dieresisstling, M; Petersson, C S; Anttila, A

Concentration distributions of fluorine in low-pressure chemical vapor deposited W/(100)Si structures have been studied by the nuclear resonance broadening technique through the reaction /sup 19/F( p,..cap alpha gamma..)/sup 16/O. In unannealed structures the total fluorine content (4.8 x 10/sup 15/ at. cm/sup -2/) was chiefly concentrated around the W/Si interface. No loss or redistribution of fluorine was observed on annealing at a temperature of 600 /sup 0/C or below where no silicide formation took place. About 20% reduction of the fluorine content was observed after annealing at 700 /sup 0/C and above where WSi/sub 2/ formation occurred. No evidence of fluorine diffusion into the silicon substrate was seen for annealing up to 900 /sup 0/C for 1 h.

• Research Organization: Royal Institute of Technology, Microwave Department, Box 70033, S-10044 Stockholm, Sweden
• OSTI ID: 6617816
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 50:21; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360101 -- Metals & Alloys-- Preparation & Fabrication
360102* -- Metals & Alloys-- Structure & Phase Studies
360104 -- Metals & Alloys-- Physical Properties
ANNEALING
ATOM TRANSPORT
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COATINGS
DEPOSITION
DIFFUSION
ELEMENTS
FLUORINE
FLUORINE 19
FLUORINE ISOTOPES
HALOGENS
HEAT TREATMENTS
IMPURITIES
ISOTOPES
LIGHT NUCLEI
METALS
NEUTRAL-PARTICLE TRANSPORT
NONMETALS
NUCLEI
ODD-EVEN NUCLEI
RADIATION TRANSPORT
REFRACTORY METAL COMPOUNDS
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS
STABLE ISOTOPES
SURFACE COATING
SYNTHESIS
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TUNGSTEN
TUNGSTEN COMPOUNDS
TUNGSTEN SILICIDES
VAPOR DEPOSITED COATINGS