Comparison between thermal annealing and ion mixing of multilayered Ni-W films on Si. II

Journal Article · Sun Dec 01 04:00:00 EST 1985 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.335550· OSTI ID:6323791

Pai, C S; Lau, S S; Poker, D B; Hung, L S

The reactions between bilayered Ni/W films and Si<100> substrates induced by thermal annealing and ion mixing were investigated and compared. Samples were prepared by electron-beam sequential deposition of Ni and W onto the Si<100> substrates and following by either furnace annealing (approx. 200--900/sup 0/C) or ion mixing (approx. 2 x 10/sup 15/ -- 4 x 10/sup 16/ /sup 86/Kr/sup +/ ions/cm/sup 2/). The reactions were analyzed by Rutherford backscattering and x-ray diffraction (Read camera). Thermal annealing of both W/Ni/Si<100> and Ni/W/Si<100> samples led to the formation of Ni silicide next to the Si substrate and W silicide on the sample surface (layer reversal between Ni and W in the Ni/W/Si<100> case). Ion mixing of W/Ni/Si<100> samples led to the formation of Ni silicide with a thin layer of Ni-W-Si mixture located at the sample surface. For Ni/W/Si<100> samples a ternary amorphous mixture of Ni-W-Si was obtained with ion mixing. These reactions were rationalized in terms of the mobilities of various atoms and the intermixings between layers.

• Research Organization: Department of Electrical Engineering and Computer Sciences, University of California, San Diego, La Jolla, California 92093
• DOE Contract Number: FG03-84ER45156
• OSTI ID: 6323791
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 58:11; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360106* -- Metals &amp; Alloys-- Radiation Effects
AMORPHOUS STATE
ANNEALING
BACKSCATTERING
BEAMS
CHARGED PARTICLES
CHEMICAL REACTIONS
COHERENT SCATTERING
COLLISIONS
DIFFRACTION
ELEMENTS
HEAT TREATMENTS
HIGH TEMPERATURE
INTERFACES
ION BEAMS
ION COLLISIONS
IONS
KRYPTON IONS
LAYERS
MEDIUM TEMPERATURE
METALS
MIXING
MOBILITY
NICKEL
NICKEL COMPOUNDS
NICKEL SILICIDES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SCATTERING
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS
SYNTHESIS
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TUNGSTEN
X-RAY DIFFRACTION