Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Comparison between thermal annealing and ion mixing of alloyed Ni-W films on Si. I

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.335549· OSTI ID:6467013
The reactions between Ni-W alloys and Si<100> substrates induced by thermal annealing and ion mixing were investigated and compared. Samples were prepared by sputtering of Ni-W alloys, both Ni-rich and W-rich, onto the Si<100> substrates, and followed by either furnace annealing (200--900/sup 0/C) or ion mixing (2 x 10/sup 15/ -- 4 x 10/sup 16/ /sup 86/Kr/sup +/ ions/cm/sup 2/). The reactions were analyzed by Rutherford backscattering and x-ray diffraction (Read camera). In general, thermal annealing and ion mixing lead to similar reactions. Phase separation between Ni and W with Ni silicides formed next to the Si substrate and W silicide formed on the surface was observed for both Ni-rich and W-rich samples under thermal annealing. Phase separation was also observed for Ni-rich samples under ion mixing; however, a Ni-W-Si ternary compound was possibly formed for ion-mixed W-rich samples. These reactions were rationalized in terms of the mobilities of various atoms and the energetics of the systems.
Research Organization:
Department of Electrical Engineering and Computer Sciences, University of California, San Diego, La Jolla, California 92093
DOE Contract Number:
AC05-84OR21400; FG03-84ER45156
OSTI ID:
6467013
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 58:11; ISSN JAPIA
Country of Publication:
United States
Language:
English