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Ion-beam-induced silicide formation

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.90716· OSTI ID:6783244
Rutherford-backscattering spectrometry and x-ray-diffraction analysis have been used to investigate intermixing between thin metal films (Pt, Ni, and Hf) and silicon substrates as a result of inert-gas ion bombardment. Silicide phases (Pt/sub 2/Si, Ni/sub 2/Si, and HfSi) were observed near the interface as long as the ion range exceeds the film thickness. For a fixed dose, the silicide thickness increases with the atomic mass of both ion and metal and is greater for Pt/sub 2/Si than HfSi. The growth of Pt/sub 2/Si showed a square-root dependence on ion dose for Ar, Kr, and Xe ions. The phenomenon of ion-induced silicide formation is similar to formation resulting from thermal anneal until the whole metal film is consumed in the reaction, at which point a progressive intermixing to redistribute the metal into deeper regions of the sample occurred along with the disappearance of the structure diffraction patterns.
Research Organization:
California Institute of Technology, Pasadena, California 91125
OSTI ID:
6783244
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 34:2; ISSN APPLA
Country of Publication:
United States
Language:
English