Redistribution of implanted dopants after metal-silicide formation

Journal Article · Fri Dec 01 04:00:00 EST 1978 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.324599· OSTI ID:6600355

Wittmer, M; Seidel, T E

The redistribution of implanted As and Sb following metal-silicide formation of Pt, Pd, and Ni has been studied. The phases of the silicides used were PtSi, Pd/sub 2/Si, and NiSi. Investigations with Rutherford backscattering analysis showed that after the formation of the silicides, the Sb was always found in the silicide layer near the surface of the samples, whereas PtSi and Pd/sub 2/Si caused a partial rejection of As for implanted doses of 2 x 10/sup 15/ cm/sup -2/ and higher. No rejection of As was found after the formation of NiSi. The results are discussed in terms of solid solubilities and impurity-metal compound formation. The data presented has implications in the fabrication of Ohmic contacts and the adjustments of the heights of Schottky barriers on silicon.

• Research Organization: California Institute of Technology, Pasadena California 91125
• OSTI ID: 6600355
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 49:12; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANTIMONY IONS
ARSENIC IONS
ATOMIC IONS
BACKSCATTERING
CHARGED PARTICLES
CRYSTAL DOPING
DOPED MATERIALS
ELASTIC SCATTERING
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
ELEMENTS
EQUIPMENT
ION IMPLANTATION
IONS
METALS
NICKEL
NICKEL COMPOUNDS
NICKEL SILICIDES
PALLADIUM COMPOUNDS
PALLADIUM SILICIDES
PHYSICAL RADIATION EFFECTS
PLATINUM COMPOUNDS
PLATINUM SILICIDES
RADIATION EFFECTS
RUTHERFORD SCATTERING
SCATTERING
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SILICIDES
SILICON COMPOUNDS
SOLUBILITY
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS