Effect of Pt addition on Ni silicide formation at low temperature: Growth, redistribution, and solubility

Journal Article · Tue Sep 15 00:00:00 EDT 2009 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3204948· OSTI ID:21361833

Hoummada, K; Perrin-Pellegrino, C; Mangelinck, D ^[1]

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1. Aix-Marseille Universite, IM2NP, Campus de Saint-Jerome, Avenue Escadrille Normandie Niemen-Case 142, F-13397 Marseille Cedex (France)

The formation of Ni silicide during the reaction between Ni(5% Pt) and a Si(100) substrate has been analyzed by differential scanning calorimetry (DSC), in situ x-ray diffraction (XRD), cross-sectional transmission electron microscopy (TEM), and {sup 4}He{sup +} Rutherford backscattering. The DSC measurements show evidence of the Ni{sub 2}Si nucleation followed by lateral growth formation. In situ XRD and TEM have been used to investigate the sequence of formation of the silicides. These experiments show that the formations of Ni{sub 2}Si and NiSi occur simultaneously in the presence of the Pt alloy. The redistribution of platinum at different stages of the Ni silicide growth has been determined. We have estimated the solubility limit of platinum (1 at. % at 573 K) in the Ni{sub 2}Si phase by extrapolation from a measured value at 1073 K. This redistribution is explained in terms of the solubility limits and the diffusion of Pt in the Ni{sub 2}Si and NiSi phases. Pt is more likely to reside at the silicide grain boundaries and the interfaces where it can slow down the silicide growth kinetics.

• OSTI ID: 21361833
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 6 Vol. 106; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALLOYS
CALORIMETRY
COHERENT SCATTERING
CRYSTAL GROWTH
DEPOSITION
DIFFRACTION
ELECTRON MICROSCOPY
ELEMENTS
FILMS
GRAIN BOUNDARIES
METALS
MICROSCOPY
MICROSTRUCTURE
NICKEL ALLOYS
NICKEL COMPOUNDS
NICKEL SILICIDES
NUCLEATION
PLATINUM
PLATINUM ALLOYS
PLATINUM METAL ALLOYS
PLATINUM METALS
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SCATTERING
SILICIDES
SILICON ALLOYS
SILICON COMPOUNDS
SOLUBILITY
SPECTROSCOPY
SPUTTERING
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE
TEMPERATURE RANGE 0400-1000 K
TEMPERATURE RANGE 1000-4000 K
THIN FILMS
TRANSITION ELEMENT ALLOYS
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION