Pt redistribution during Ni(Pt) silicide formation
- Instituut voor Kern-en Stralingsfysica and INPAC, KULeuven, B-3001 Leuven (Belgium)
- Vakgroep Vaste-stofwetenschappen, Universiteit Gent, B-9000 Gent (Belgium)
- Department of Physics, University of Cape Town, Rondebosch 7700 (South Africa)
- Instituto Tecnologico e Nuclear, Estrada Nacional 10, Apartado 21, 2686-953 Sacavem, Portugal and Centro de Fisica Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1699 Lisboa Codex (Portugal)
- Instituto Superior de Engenharia do Porto, R. S. Tome, 4200 Porto (Portugal)
We report on a real-time Rutherford backscattering spectrometry study of the erratic redistribution of Pt during Ni silicide formation in a solid phase reaction. The inhomogeneous Pt redistribution in Ni(Pt)Si films is a consequence of the low solubility of Pt in Ni{sub 2}Si compared to NiSi and the limited mobility of Pt in NiSi. Pt further acts as a diffusion barrier and resides in the Ni{sub 2}Si grain boundaries, significantly slowing down the Ni{sub 2}Si and NiSi growth kinetics. Moreover, the observed incorporation of a large amount of Pt in the NiSi seeds indicates that Pt plays a major role in selecting the crystallographic orientation of these seeds and thus in the texture of the resulting Ni{sub 1-x}Pt{sub x}Si film.
- OSTI ID:
- 21175838
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 26 Vol. 93; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
The influence of Pt redistribution on Ni{sub 1-x}Pt{sub x}Si growth properties
Redistribution of implanted dopants after metal-silicide formation