Thermal stability of multilayer films Pt/Si, W/Si, Mo/Si, and W/C

Journal Article · Sun Jan 01 04:00:00 EST 1989 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.342569· OSTI ID:6620747

Jiang, Z; Jiang, X; Liu, W; Wu, Z

The thermal stability of multilayer films has been studied by use of small-angle x-ray diffraction. The temperatures at which the periodicities of Pt/Si, W/Si, Mo/Si, and W/C multilayers begin to be worse are 200, 300, 400, 900 /sup 0/C, respectively. The temperatures of total mixing of Pt/Si, W/Si, Mo/Si, and W/C are 600, 600, 700, and >900 /sup 0/C, respectively. The periods of Mo/Si and W/Si decrease about 5%, 10%, respectively, after annealing at 400 /sup 0/C for 0.5 h. The period of W/C increases continuously with the increasing temperatures. After annealing at 1000 /sup 0/C for 0.5 h the increment of the period of W/C is about 20%. The former may be mainly due to the interfacial reaction between metal and Si and the latter may be due to the expansion of C films in W/C.

• Research Organization: Structure Research Laboratory, University of Science and Technology of China, Hefei, Anhui, China
• OSTI ID: 6620747
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 65:1; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360104* -- Metals & Alloys-- Physical Properties
ANNEALING
CARBON
COATINGS
COHERENT SCATTERING
DEPOSITION
DIFFRACTION
ELEMENTS
FILMS
HEAT TREATMENTS
HIGH TEMPERATURE
LAYERS
MEDIUM TEMPERATURE
METALS
MOLYBDENUM
NONMETALS
PLATINUM
PLATINUM METALS
SCATTERING
SEMIMETALS
SILICON
STABILITY
SURFACE COATING
THIN FILMS
TRANSITION ELEMENTS
TUNGSTEN
VERY HIGH TEMPERATURE
X-RAY DIFFRACTION