Annealing behavior of refractory metal multilayers on Si: The Mo/Ti and W/Ti systems

Journal Article · Fri Apr 01 04:00:00 EST 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.341035· OSTI ID:5452001

Puppin, E; Krishnamurthy, V; Helms, C R

Structures consisting of alternate layers of Mo/Ti and W/Ti have been sputter deposited on Si(100) substrates and their annealing behavior has been studied using Auger sputter profiling. The anneals were performed under typical processing conditions. Two major driving forces control the observed reactions: the silicidation of the metals and the oxidation of Ti. The prevalence of one of them depends both on the structure of the as-deposited film and on the annealing temperature. In the case where silicidation prevails a multisilicide layer is formed, with no alteration with respect to the initial disposition order of the metal films. Intermixing between the reacted layers starts to be observed at 900 /sup 0/C. The behavior of common contaminants such as oxygen and carbon has been studied.

• Research Organization: Stanford Electronics Labs, Stanford University, Stanford, California 94305
• OSTI ID: 5452001
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 63:7; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360105* -- Metals & Alloys-- Corrosion & Erosion
ANNEALING
CARBON
COATINGS
DEPOSITION
ELEMENTS
FABRICATION
HEAT TREATMENTS
METALS
MIXING
MOLYBDENUM
NONMETALS
OXYGEN
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS
SPUTTERING
SUPERLATTICES
SURFACE COATING
SURFACE TREATMENTS
TITANIUM
TRANSITION ELEMENTS
TUNGSTEN