The effect of oxygen in the Si substrate on Mo, W, Ti, and Co silicide growth by infrared laser heating

Journal Article · Wed Aug 01 04:00:00 EDT 1990 · Journal of the Electrochemical Society; (USA)

DOI:https://doi.org/10.1149/1.2086998· OSTI ID:6504418

Lee, H S; Wolga, G J ^[1]

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1. School of Electrical Engineering, Cornell Univ., Ithaca, NY (US)

This study of the effect of implanted oxygen in the Si substrate was accomplished using an IR heating method and a combination of different materials analysis techniques. Principally, Auger electron spectroscopy combined with depth profiling was implemented to investigate the composition of the reacted metal-Si systems as well as the relative movement of the oxygen during silicide formation. The authors systematic study of these four metal-Si systems yielded some interesting results. First, for the three metals Mo, W, and Ti, we observed basically inhibited metal-Si reactions at laser processing conditions that yielded completely reacted metal silicides without implanted oxygen. Second, the evolution from inhibited reactions through partial, metal-rich silicides and finally to completely reacted metal silicide formation at high temperatures was observed and characterized. Last, a distinctly response to the presence of oxygen was observed for the Ti samples as compared to the Mo and W samples.

• OSTI ID: 6504418
• Journal Information: Journal of the Electrochemical Society; (USA), Journal Name: Journal of the Electrochemical Society; (USA) Vol. 137:8; ISSN JESOA; ISSN 0013-4651
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360102 -- Metals & Alloys-- Structure & Phase Studies
640302 -- Atomic
Molecular & Chemical Physics-- Atomic & Molecular Properties & Theory
656002 -- Condensed Matter Physics-- General Techniques in Condensed Matter-- (1987-)
656003* -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
74 ATOMIC AND MOLECULAR PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AUGER ELECTRON SPECTROSCOPY
CHEMICAL COMPOSITION
CHEMICAL REACTION KINETICS
COBALT COMPOUNDS
COBALT SILICIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRON SPECTROSCOPY
ELEMENTS
HEATING
INTERFACES
ION IMPLANTATION
KINETICS
LASER-RADIATION HEATING
METALS
MOLYBDENUM
NONMETALS
OXYGEN
PLASMA HEATING
POINT DEFECTS
REACTION KINETICS
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS
SPECTROSCOPY
SUBSTRATES
TITANIUM
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TUNGSTEN
VACANCIES