Characterization of radiation effects on trench-isolated bipolar analog microcircuit technology

Journal Article · Mon Jun 01 04:00:00 EDT 1992 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/23.277527· OSTI ID:7289110

Raymond, J P ^[1]; Gardner, R A ^[2]; LaMar, G E ^[3]

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1. Mission Research Corp., San Diego, CA (US)
2. C.S. Draper Lab., Cambridge, MA (US)
3. U.S. Air Force Ballistic Missile Organization, San Bernardino, CA (US)

In this paper, radiation effects on trench-isolated bipolar analog microcircuits are characterized through measurement of neutron damage, long-term ionizing radiation damage, transient photoresponse and pulsed radiation-induced latchup. The characterization was done to provide basic information on the hardness of the technology for potential system application. The goal of the characterization was to determine if there were any surprises in the radiation susceptibility. In summary, there are none in the displacement damage, transient photoresponse or radiation-induced latchup.

• OSTI ID: 7289110
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 39:3; ISSN 0018-9499; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
BARYONS
BOSONS
CRYSTAL DOPING
ELECTRONIC CIRCUITS
ELEMENTARY PARTICLES
FERMIONS
HADRONS
HARDENING
IONIZATION
MASSLESS PARTICLES
MICROELECTRONIC CIRCUITS
NEUTRONS
NUCLEONS
PHOTONS
PHYSICAL RADIATION EFFECTS
PULSES
RADIATION EFFECTS
RADIATION HARDENING
TECHNOLOGY ASSESSMENT
TRANSIENTS