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Study of radiation effects in bulk CMOS microcircuits, I21/LSI logic cells and optical couplers. Final report jan-dec 74

Technical Report ·
OSTI ID:5046853

Results are presented on the study of radiation effects in bulk CMOS microcircuits, basic logic cells of developmental integrated-injection-logic (I2L) LSI, and optical couplers. Radiation effects considered include the permanent damage effects resulting from neutron displacement damage and total ionizing radiation dose. Transient photoresponse has been measured as a function of ionizing radiation pulse width. CMOS latch-up was investigated as induced by electrical pulsed overstress and/or pulsed ionizing radiation exposure. No significant synergistic effects were observed.

Research Organization:
Northrop Research and Technology Center, Hawthorne, CA (USA)
OSTI ID:
5046853
Report Number(s):
AD-B-011702/8
Country of Publication:
United States
Language:
English