Integrated injection logic (I/sup 2/L). Comparative and design trade-off evaluation. Topical report May--December 1976
Electrical parameters and radiation susceptibility of integrated injection logic (I/sup 2/L) microcircuit circuit technology are reviewed. Comparisons are drawn between I/sup 2/L and other contemporary LSI microcircuit technologies such as TTL, Schottky-clamped TTL, ECL, p-MOS, n-MOS, CMOS and CMOS/SOS. Performance parameters considered include cell density, switching speed, power dissipation, speed-power product, output drive capability and temperature range. Radiation effects considered are those of neutron damage, long-term ionization damage, electrical pulsed overstress damage and transient photoresponse. Trade-offs in electrical performance parameters and radiation susceptibility are suggested for 'conventional' I/sup 2/L design. Critical design considerations in I/sup 2/L are electrical switching response, noise margin and neutron damage susceptibility. On the other hand, I/sup 2/L is of potential major advantage in the parameters of power dissipation, temperature range, long-term ionization damage susceptability and transient photoresponse.
- Research Organization:
- Mission Research Corp., La Jolla, CA (USA)
- OSTI ID:
- 6482378
- Report Number(s):
- AD-A-056392; MRC/SD-R-8
- Country of Publication:
- United States
- Language:
- English
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