Radiation effects on oxides, semiconductors, and devices. Final report, Mar 1974--Jan 1975

Technical Report · Thu May 01 04:00:00 EDT 1975

OSTI ID:7286428

Srour, J R; Curtis, Jr, O L; Othmer, S; Chiu, K Y

Topics include oxide studies--hole and electron transport in SiO2 films, charge transport studies in SiO2: processing effects and implications for radiation hardening, ionizing dose rate effects in MOS devices, experiments on MOS capacitors fabricated on a p-type silicon substrate, ion microanalyzer measurements on SiO2 films, effects of bias polarity on current flow in SiO2 under electron beam injection, studies of charge transport and charge buildup in pure SiO2 and Al+-implanted pure SiO2, determination of hole mobility in SiO2 films; and semiconductor studies.

• Research Organization: Northrop Research and Technology Center, Hawthorne, Calif. (USA)
• OSTI ID: 7286428
• Report Number(s): AD-A-010781; NRTC-75-5R
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CAPACITORS
CHALCOGENIDES
CHARGE TRANSPORT
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELECTRON TRANSFER
ELEMENTS
EQUIPMENT
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HARDENING
HEAT TREATMENTS
MOS TRANSISTORS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RADIATION HARDENING
RECOMBINATION
RESEARCH PROGRAMS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
TRANSISTORS
TRAPPING