Oxide charge accumulation in metal oxide semiconductor devices during irradiation

Journal Article · Wed May 15 00:00:00 EDT 1991 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.347603· OSTI ID:5615798

Lee, D ^[1]; Chan, C ^[2]

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1. Institute of Nuclear Energy Research, P.O. Box 3-11, Lung-Tan 32500, Taiwan, Republic of China (TW)
2. Chung-Cheng Institute of Technology, P. O. Box 90047, Ta-Hsi 33500, Taiwan, (Republic of China)

An analysis of a simple physical model for radiation induced oxide charge accumulation in the SiO{sub 2} layer of metal oxide semiconductor (MOS) structure has been developed. The model assumes that both electron and hole traps exist in the oxide layer. These traps can capture electrons as well as holes during irradiation. Using this model, final oxide charge distributions in the oxide layer of MOS capacitors exposed to a total dose radiation can be predicted. The resulting charge distribution is calculated to yield the midgap voltage shifts as functions of total dose, bias voltage, and oxide thickness. The results are shown to agree well with the experimental data. Furthermore, the model successfully analyzes the radiation-induced negative oxide charge distribution in an ion-implanted, radiation-hard MOS capacitor. These negative oxide charge distributions not only partially compensate the effects of trapped positive oxide charges but also reduced the density of positive oxide charges trapped near the Si/SiO{sub 2} interface. We found the reduction of the positive oxide charge density near the Si/SiO{sub 2} interface is due to internal electric field modification in the oxide layer.

• OSTI ID: 5615798
• Journal Information: Journal of Applied Physics; (USA), Vol. 69:10; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CAPACITORS
PHYSICAL RADIATION EFFECTS
SILICA
ELECTRONS
OXIDATION
CHALCOGENIDES
CHEMICAL REACTIONS
ELECTRICAL EQUIPMENT
ELEMENTARY PARTICLES
EQUIPMENT
FERMIONS
LEPTONS
MINERALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
RADIATION EFFECTS
SILICON COMPOUNDS
SILICON OXIDES
360605* - Materials- Radiation Effects
426001 - Engineering- Superconducting Devices & Circuits- (1990-)