Radiation effects on oxides, semiconductors, and devices. Final report May 1975--Apr 1976
Analytical and experimental studies of charge transport and charge buildup in aluminum-implanted SiO/sup 2/ were performed which indicate that both electrons and holes are trapped in the implanted region. Results of an ionizing dose rate study for CMOS devices are presented in which the effects of two low dose rates (0.2 and 70 rads(Si)/sec) are compared. Charge transport studies on pedigreed MOS capacitors were made and results compared to those for similar devices. Detailed measurements of charge transport in radiation-hardened SiO/sup 2/ films were performed as a function of temperature, applied electric field, and time following pulsed excitation. Determinations of SiO/sup 2/ hole mobility were also made as a function of time, temperature, and field. An investigation of charge buildup at low temperatures in radiation-hardened MOS capacitors was performed and severe flatband voltage shifts were noted. Employment of ion-implanted oxides was observed to reduce this effect. A bibliography of published work on neutron-irradiated silicon is included. (GRA)
- Research Organization:
- Northrop Research and Technology Center, Hawthorne, CA (USA)
- OSTI ID:
- 7224405
- Report Number(s):
- AD-A-028034; NRTC-76-36R
- Country of Publication:
- United States
- Language:
- English
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46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
BUILDUP
CAPACITORS
CARRIER MOBILITY
CHALCOGENIDES
CHARGE TRANSPORT
DOSE RATES
ELECTRICAL EQUIPMENT
ELEMENTS
EQUIPMENT
MOBILITY
MOS TRANSISTORS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
TRANSISTORS
TRAPPING