Chemical processes in vapor deposition of silicon. II. Deposition from trichlorosilane and tetrachlorosilane

Journal Article · Wed Jan 01 04:00:00 EST 1975 · J. Electrochem. Soc.; (United States)

DOI:https://doi.org/10.1149/1.2134023· OSTI ID:7284720

Ban, V S

Chemical processes occurring in the vapor deposition of Si from SiCl/sub 3/H and SiCl/sub 4/ were studied by means of a mass spectrometer coupled to a chemical-vapor-deposition reactor. Species identified in the vapor phase were H/sub 2/, HCl, SiCl/sub 2/, SiCl/sub 2/H/sub 2/, SiCl/sub 3/H, and SiCl/sub 4/. Their partial pressures were measured at 1000/sup 0/, 1200/sup 0/, and 1300/sup 0/K; the Cl/H value was 10/sup -1/. Values of these partial pressures were compared with the calculated equilibrium partial pressures for the Si-Cl-H system, as well as with partial pressures determined in the deposition of Si from SiCl/sub 2/H/sub 2/. On the basis of the obtained results, the nature and extent of chemical processes occurring during the deposition of Si from SiCl/sub 4/ and SiCl/sub 3/H are discussed. (WDM)

• Research Organization: RCA Lab., Princeton, NJ
• OSTI ID: 7284720
• Journal Information: J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 122:10; ISSN JESOA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360104 -- Metals & Alloys-- Physical Properties
CHEMICAL COATING
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
DECOMPOSITION
DEPOSITION
ELEMENTS
SEMIMETALS
SILICON
SURFACE COATING