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Chemical-vapor deposition of materials in the silcon-aluminum-carbon-nitrogen system

Technical Report ·
OSTI ID:6161070
Chemical vapor deposition of silicon carbide from gaseous mixtures of CH/sub 3/SiCl/sub 3/,H/sub 2/,SiCl/sub 4/ and (CH/sub 3/)/sub 3/SiCl/sub 3/ was examined at temperatures ranging from 1200 to 1750/sup 0/C. The coating rate was observed to increase with temperature, CH/sub 3/SiCl/sub 3/ concentration and CH/sub 3/SiCl/sub 3//SiCl/sub 4/ ratios. In addition, the codeposition of condensed phases from CH/sub 3/SiCl/sub 3/ and AlCl/sub 3/.NH/sub 3/ gases were examined at 1200/sup 0/C as a function of CH/sub 3/SiCl/sub 3//AlCl/sub 3/.NH/sub 3/ (MTS/ACN) mole ratio. Nomially pure AlN could be formed for ratios of MTS/ACN less than or equal to 0.1. Mixtures of AlN and polycrystalline ..cap alpha..-Si/sub 3/N/sub 4/ formed for gas mixtures of 0.1 less than or equal to MTS/ACN less than or equal to 1. Amorphous Si/sub 3/N/sub 4/ (with traces of free silicon) formed for cases where 1 less than or equal to MTS/ACN less than or equal to 10. Finally, mixtures of free silicon and ..beta..-SiC were found for gas mixtures of MTS/ACN less than or equal to 10. AlN which has the 2H wurtzite structure serves to nucleate ..cap alpha..-Si/sub 3/N/sub 4/ which otherwise forms as an amorphous deposit.
Research Organization:
Illinois Univ., Urbana (USA)
DOE Contract Number:
AC02-76ER01198
OSTI ID:
6161070
Report Number(s):
DOE/ER/01198-1360; ON: DE81028878
Country of Publication:
United States
Language:
English